• DocumentCode
    1103970
  • Title

    Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors

  • Author

    Cappy, Alain ; Vanoverschelde, Andre ; Schortgen, Marc ; Versnaeyen, Christophe ; Salmer, Georges

  • Author_Institution
    Université des Sciences et Techniques de Lille, Villeneuve d´´Ascq Cedex, France
  • Volume
    32
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    2787
  • Lastpage
    2796
  • Abstract
    Noise modeling in TEGFET´s which provides good results in agreement with the experimental findings is presented. The influence of the main technological parameters on the noise figure and associated gain is given for operating frequencies up to 60 GHz. A comparison between TEGFET´s and MESFET´s is carried out. A new method for calculating the noise and gain performances of FET´s is then proposed.
  • Keywords
    FETs; Frequency; HEMTs; MESFETs; MODFETs; Millimeter wave technology; Noise figure; Noise measurement; Performance gain; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22417
  • Filename
    1485163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103970