DocumentCode
1104239
Title
Variation of MIM damascene capacitor HF performance evolving from 2D to 3D architectures
Author
Capraro, S. ; Bermond, C. ; Vo, T.T. ; Farcy, A. ; Piquet, J. ; Thomas, M. ; Cremer, S. ; Flechet, B. ; Torres, J.
Author_Institution
Univ. de Savoie, Le Bourget du Lac
Volume
44
Issue
6
fYear
2008
Firstpage
411
Lastpage
412
Abstract
High-frequency (HF) characterisations of 2D and 3D metal-insulator-metal (MIM) damascene capacitors are presented focusing on the impact of the MIM architecture on the HF performance of capacitors integrated in the back end of line with Si3N4 as the insulating material. Dedicated test structures were integrated and HF characterisation methods developed. Results show that properties (parasitic inductance and cutoff frequency) of MIM capacitors improve with the 3D architecture.
Keywords
MIM devices; capacitors; 2D metal-insulator-metal damascene capacitor; 3D metal-insulator-metal damascene capacitor; MIM capacitor; high-frequency characterisation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20083129
Filename
4472411
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