• DocumentCode
    1104307
  • Title

    Below bandgap emission and absorption in ZnSnP2/GaAs heterojunctions

  • Author

    Patten, E.A. ; Davis, G.A. ; Hsieh, S.J. ; Wolfe, C.M.

  • Author_Institution
    Washington University, St. Louis, MO
  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    60
  • Lastpage
    62
  • Abstract
    Below bandgap emission and absorption are observed in p-ZnSnP2on n-GaAs heterojunctions. The band lineup of this heterostructure system suggests that the below bandgap transition is between the valence bands of GaAs and the conduction band of ZnSnP2at the interface. The predicted value for the interfacial gap of E_{I} = 1.27 eV compares with an experimental value of 1.31 eV.
  • Keywords
    Absorption; Electrons; Gallium arsenide; Heterojunctions; Photoconductivity; Photonic band gap; Photovoltaic systems; Radiative recombination; Solar power generation; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26041
  • Filename
    1485194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104307