• DocumentCode
    1104532
  • Title

    Nonstatic effects in the GaAs permeable base transistor

  • Author

    Hwang, C.G. ; Navon, D.H. ; Tang, T.W.

  • Author_Institution
    University of Massachusetts, Amherst, MA
  • Volume
    6
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    114
  • Lastpage
    116
  • Abstract
    Nonstatic transport effects in the permeable base transistor (PBT) are included in a two-dimensional multiparticle Monte Carlo (MC) analysis. This approach predicts charge depletion between the gate electrodes as VGSis increased over 0.5 V, as opposed to the accumulation of a net negative space charge predicted by the conventional static mobility model. More than a 60-percent increase in unity-current gain-frequency fT, of the PBT was predicted compared with the conventional result.
  • Keywords
    Charge carrier density; Doping; Electrodes; Electrons; Gallium arsenide; Monte Carlo methods; Predictive models; Programmable control;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26064
  • Filename
    1485217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104532