Title :
A 9-GHz frequency divider using Si bipolar super self-aligned process technology
Author :
Suzuki, M. ; Hagimoto, K. ; Ichino, H. ; Konaka, S.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Atsugi-shi, Kanagawa, Japan
fDate :
4/1/1985 12:00:00 AM
Abstract :
A very high-speed 1/8 frequency divider is fabricated, using Si bipolar super self-aligned process technology (SST), and tested. The circuit consists of three T-connected D-type master-slave flip-flops and buffers. A low voltage swing (225 mV) differential circuit technique is adopted for the first stage T-type flip-flop. The divider is capable of operating at up to 9 GHz with a power dissipation of 554 mW.
Keywords :
Circuits; Flip-flops; Frequency conversion; Low voltage; Master-slave; Space technology; Telegraphy; Telephony; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26089
