Noise Equivalent Circuit Model of Thin Avalanche Photodiodes

Author

Akbari, Mohammad Hossein ; Jalali, Mohammad

Author_Institution

Sch. of Eng., Shahed Univ., Tehran, Iran

Volume

35

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

648

Lastpage

650

Abstract

In this letter, a circuit model of noise is presented for thin avalanche photodiodes. By defining an effective electric field over the multiplication region and using position-dependent ionization coefficients, the model tries to include the effects of carrier´s dead space and previous ionization history. Then, using a predicted multiplication gain, the model obtains the photocurrent response and output noise spectrum. The excess noise factor and spectral signal-to-noise ratio obtained from the proposed model are compared with available experimental data for different widths of multiplication region. The model is suitable for sensitivity and gain-bandwidth analysis.

Keywords

avalanche photodiodes; equivalent circuits; ionisation; optical noise; carrier dead space; effective electric field; excess noise factor; gain-bandwidth analysis; ionization history; multiplication region; noise equivalent circuit model; output noise spectrum; photocurrent response; position-dependent ionization coefficients; predicted multiplication gain; sensitivity analysis; spectral signal-to-noise ratio; thin avalanche photodiodes; Avalanche photodiodes; Charge carrier processes; History; Integrated circuit modeling; Ionization; Signal to noise ratio; Avalanche photodiode; dead space effect; excess noise factor; multiplication gain; signal-to-noise ratio; signal-to-noise ratio.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2319207

Filename

6812186