Title :
AlGaAs/GaAs MESFET IC with Ni buried gate technology
Author :
Mizutani, T. ; Arai, K. ; Oe, K. ; Fujita, S. ; Imamura, Y. ; Yanagawa, F.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
fDate :
5/1/1985 12:00:00 AM
Abstract :
Ni buried gate technology for threshold voltage control using a Ni-GaAs reaction by a heat treatment is developed and successfully applied to AlGaAs/GaAs heterostructure MESFET IC´s. Switching delay time of 36.7 ps with the power-delay product of 10 fJ (1-V supply voltage) was obtained at 83 K for a ring oscillator with 1.5-µm gate FET´s. This technology, together with the saturated resistor loads, promises to simplify the process for AlGaAs/GaAs MESFET LSI´s by not requiring active-layer etching.
Keywords :
Delay effects; FETs; Gallium arsenide; Heat treatment; MESFET integrated circuits; Ring oscillators; Temperature control; Threshold voltage; Voltage control; Voltage-controlled oscillators;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26108
