DocumentCode
1104971
Title
AlGaAs/GaAs MESFET IC with Ni buried gate technology
Author
Mizutani, T. ; Arai, K. ; Oe, K. ; Fujita, S. ; Imamura, Y. ; Yanagawa, F.
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume
6
Issue
5
fYear
1985
fDate
5/1/1985 12:00:00 AM
Firstpage
232
Lastpage
233
Abstract
Ni buried gate technology for threshold voltage control using a Ni-GaAs reaction by a heat treatment is developed and successfully applied to AlGaAs/GaAs heterostructure MESFET IC´s. Switching delay time of 36.7 ps with the power-delay product of 10 fJ (1-V supply voltage) was obtained at 83 K for a ring oscillator with 1.5-µm gate FET´s. This technology, together with the saturated resistor loads, promises to simplify the process for AlGaAs/GaAs MESFET LSI´s by not requiring active-layer etching.
Keywords
Delay effects; FETs; Gallium arsenide; Heat treatment; MESFET integrated circuits; Ring oscillators; Temperature control; Threshold voltage; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26108
Filename
1485261
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