DocumentCode :
1105036
Title :
The temperature dependence of threshold voltages in submicrometer CMOS
Author :
Tzou, H.J. ; Yao, C.C. ; Cheung, R. ; Chan, H.
Author_Institution :
Advanced Micro Devices, Inc., Sunnyvale, CA
Volume :
6
Issue :
5
fYear :
1985
fDate :
5/1/1985 12:00:00 AM
Firstpage :
250
Lastpage :
252
Abstract :
The temperature coefficient of the threshold voltage in long buried-p-channel MOSFET is 
mV/°C, which is much larger than that in the long enhancement-mode n-channel MOSFET (-1.27 mV/°C). The difference is caused by the charge freeze-out phenomenon in the buried-channel MOSFET. The absolute value of the temperature coefficient of the threshold voltage 
, decreases with decreasing channel length in the n-channel MOSFET, however, it increases with decreasing channel length in the submicrometer p-channel MOSFET. The difference results from the majority-carrier spill-over phenomenon in the buried-p-channel MOSFET.
mV/°C, which is much larger than that in the long enhancement-mode n-channel MOSFET (-1.27 mV/°C). The difference is caused by the charge freeze-out phenomenon in the buried-channel MOSFET. The absolute value of the temperature coefficient of the threshold voltage , decreases with decreasing channel length in the n-channel MOSFET, however, it increases with decreasing channel length in the submicrometer p-channel MOSFET. The difference results from the majority-carrier spill-over phenomenon in the buried-p-channel MOSFET.Keywords :
Capacitance; Dielectric constant; Doping; Electrical resistance measurement; Intrusion detection; MOSFET circuits; Silicon; Solids; Temperature dependence; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26114
Filename :
1485267
Link To Document :
