• DocumentCode
    1105370
  • Title

    Switching in NERFET circuits

  • Author

    Kastalsky, A. ; Luryi, S. ; Gossard, A.C. ; Chan, W.K.

  • Author_Institution
    Bell Communications Research, Murray Hill, NJ, USA
  • Volume
    6
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    347
  • Lastpage
    349
  • Abstract
    NERFET is a three-terminal device possessing a pronounced negative differential resistance due to the effect of real-space hot-electron transfer. The device structure, substantially modified compared to our earlier reports, gives an improved performance at room temperature. In this work, logic operation of a circuit formed by two NERFET´s is demonstrated for the first time. Sharp switching of output voltage is observed. Using this circuit, we have demonstrated the operation of an inverter and a bistable switch. Under certain bias configurations the circuit also exhibits a tristable behavior which can be used for ternary logic.
  • Keywords
    Electrodes; Gallium arsenide; Inverters; Logic circuits; Logic devices; Superlattices; Switches; Switching circuits; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26150
  • Filename
    1485303