DocumentCode
1105422
Title
Optical limiting in GaAs
Author
Boggess, Thomas F., Jr. ; Smirl, Arthur L. ; Moss, Steven C. ; Boyd, Ian W. ; Van Stryland, Eric W.
Author_Institution
North Texas State University, Denton, TX, USA
Volume
21
Issue
5
fYear
1985
fDate
5/1/1985 12:00:00 AM
Firstpage
488
Lastpage
494
Abstract
We have used two-photon absorption, self-defocusing, and optically-induced melting in GaAs to limit 1 μm picosecond pulsed radiation. The contribution to the limiting action from each of these mechanisms is discussed and demonstrated. Additionally, we measure a two-photon absorption coefficient of 26 cm/GW, which is in good agreement with the smallest values reported in the literature. A pulse-width study of the nonlinear absorption was conducted to isolate the effects of two-photon-generated free-carrier absorption. Results indicate that, even though the number of free-carriers is sufficient to severely defocus the incident beam, free-carrier absorption does not measurably contribute to the nonlinear absorption.
Keywords
Gallium materials/devices; Infrared refraction; Limiting; Optical propagation in nonlinear media; Absorption; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical filters; Optical pulses; Optical refraction; Optical sensors; Optical variables control;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072688
Filename
1072688
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