• DocumentCode
    1105422
  • Title

    Optical limiting in GaAs

  • Author

    Boggess, Thomas F., Jr. ; Smirl, Arthur L. ; Moss, Steven C. ; Boyd, Ian W. ; Van Stryland, Eric W.

  • Author_Institution
    North Texas State University, Denton, TX, USA
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    488
  • Lastpage
    494
  • Abstract
    We have used two-photon absorption, self-defocusing, and optically-induced melting in GaAs to limit 1 μm picosecond pulsed radiation. The contribution to the limiting action from each of these mechanisms is discussed and demonstrated. Additionally, we measure a two-photon absorption coefficient of 26 cm/GW, which is in good agreement with the smallest values reported in the literature. A pulse-width study of the nonlinear absorption was conducted to isolate the effects of two-photon-generated free-carrier absorption. Results indicate that, even though the number of free-carriers is sufficient to severely defocus the incident beam, free-carrier absorption does not measurably contribute to the nonlinear absorption.
  • Keywords
    Gallium materials/devices; Infrared refraction; Limiting; Optical propagation in nonlinear media; Absorption; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical filters; Optical pulses; Optical refraction; Optical sensors; Optical variables control;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072688
  • Filename
    1072688