Title :
High-quality GaAs MESFET´s grown on Silicon substrates by molecular-beam epitaxy
Author :
Morkoç, H. ; Peng, C.K. ; Henderson, T. ; Kopp, W. ; Fischer, R. ; Erickson, L.P. ; Longerbone, M.D. ; Youngman, R.C. ; Longerbone, M.D. ; Youngman, R.C.
Author_Institution :
University of Illinois, Urbana, IL
fDate :
7/1/1985 12:00:00 AM
Abstract :
High-quality epitaxial films of 2.3-µm-thick GaAs were grown on 3-in-diam
Keywords :
Coatings; Doping; Electron mobility; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Semiconductor films; Silicon; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26162
