Title :
Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: Spectroscopy of 950 nm high energy emission
Author :
Zhuang, Weihua ; Zheng, Baozhen ; Xu, Junying ; Li, Yuzhang ; Xu, Jizhong ; Chen, Peili
Author_Institution :
Institute of Semiconductors, Academia Sinica, Beijing, China
fDate :
6/1/1985 12:00:00 AM
Abstract :
From 1.3 μm stripe InGaAsP/InP DH lasers, we observed a 950 nm emission band which originates from band-to-band recombination in InP confinement layers. This experimental result can be well explained by considering the overflow of injected carriers from InGaAsP into InP. The overflowed energetic carriers were created by Auger recombination in InGaAsP.
Keywords :
Gallium materials/lasers; Carrier confinement; DH-HEMTs; Diode lasers; Heterojunctions; Indium phosphide; Laser stability; Pulse measurements; Spectroscopy; Temperature dependence; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1985.1072699
