Comparison of temperature models for the drain current of MESFET´s

In this paper, the Curtice, Shoucair, Selmi, and Rodriguez nonlinear dc drain current thermal models for the GaAs MESFET device are compared to determine which best fulfills the nonlinear criteria. The comparison is performed using a variety of MESFET´s of varying gate-widths, pinch-off voltages, and number of fingers to assess the consistency of the models. The nonlinear criteria are assessed with the models applied under different bias and temperature conditions. The execution speed of the models is also assessed, since this is a significant feature from a circuit simulation point of view