DocumentCode :
1105741
Title :
An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors
Author :
Loh, W.M. ; Swirhun, S.E. ; Crabbé, E. ; Saraswat, K. ; Swanson, R.M.
Author_Institution :
Stanford University, Stanford, CA
Volume :
6
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
441
Lastpage :
443
Abstract :
The cross-bridge Kelvin resistor structure is used to extract true interfacial specific contact resistivity (ρc). Two-dimensional (2-D) simulations demonstrate that the sublinear behavior of the measured contact resistance versus contact area on a log-log plot is due to current crowding around the contact which results from the contact window size being smaller than the diffusion width. The effect is more pronounced for low values of ρc. Excellent agreement has been found between the simulations and measured data of contact resistances. An accurate value of ρchas been extracted for the case of PtSi to n+polysilicon contacts.
Keywords :
Area measurement; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Kelvin; Proximity effect; Resistors; Size measurement; Two dimensional displays;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26185
Filename :
1485338
Link To Document :
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