DocumentCode
110603
Title
Pixel-Level Charge and Current Injection Circuit for High Accuracy Calibration of the DSSC Chip at the European XFEL
Author
Manghisoni, Massimo ; Comotti, D. ; Quartieri, Emanuele ; Fischer, P. ; Porro, M.
Author_Institution
Dipt. di Ing., Univ. di Bergamo, Dalmine, Italy
Volume
60
Issue
5
fYear
2013
fDate
Oct. 2013
Firstpage
3852
Lastpage
3861
Abstract
This work presents the experimental results from the characterization of the second prototype of a high accuracy (in terms of linearity, mismatch and noise) injection circuit to be used for in-pixel calibration of a large sensor matrix. The circuit was designed for the calibration of the pixel cell unit of a hybrid pixel device, the DEPFET Sensor with Signal Compression (DSSC) chip, for the large format imager at the European X-ray Free Electron Laser (XFEL), but, in principle, it can be used also for other kinds of detectors, e.g., deep N-well monolithic CMOS sensors. In the case of hybrid pixels, the injection circuit is particularly useful to test the functionality of the readout electronics already at the chip level, when no sensor is connected to the chip. Two injection techniques have been investigated: one for a charge sensitive amplification and the other for a transresistance readout channel. The aim of the paper is to describe the architecture of the calibration circuit, which has been implemented in a 130-nm CMOS technology, and to present the results from the characterization of the second prototype.
Keywords
CMOS image sensors; X-ray lasers; calibration; free electron lasers; readout electronics; signal processing equipment; CMOS technology; DEPFET sensor with signal compression chip; DSSC chip; European X-ray free electron laser; European XFEL; charge sensitive amplification; current injection circuit; deep N-well monolithic CMOS sensors; detectors; high accuracy calibration; hybrid pixel device; in-pixel calibration; large format imager; large sensor matrix; pixel cell unit calibration; pixel-level charge circuit; readout electronic functionality; size 130 nm; transresistance readout channel; Calibration; Computer architecture; Current measurement; Decision support systems; Microprocessors; Noise; Noise measurement; Calibration; DSSC; XFEL; high accuracy; injection circuit; pixel;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2013.2277331
Filename
6589009
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