DocumentCode
1106286
Title
The study on hole mobility in the inversion layer of P-channel MOSFET
Author
Kaneko, Masaru ; Narita, Izuru ; Matsumoto, Shinichi ; Matsumoto, Satoru
Author_Institution
Keio University, Hiyoshi, Yokohama, Japan
Volume
6
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
575
Lastpage
577
Abstract
The mobility and the density of holes in the inverted
Keywords
Density measurement; Doping; Electron mobility; MOSFET circuits; Particle scattering; Phonons; Rough surfaces; Surface roughness; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26235
Filename
1485388
Link To Document