DocumentCode
1106384
Title
Floating metal rings (FMR), a novel high-voltage blocking technique
Author
Yilmaz, Hamza ; Van Dell, William R.
Author_Institution
General Electric Company, Syracuse, NY
Volume
6
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
600
Lastpage
601
Abstract
Floating Metal Rings (FMR), a novel high-voltage blocking technique, is proposed. Its feasibility has been demonstrated using a 600- V wide-base Bipolar Junction Transistor (BJT). The new technique supercedes the diffused guard ring approach to increasing junction breakdown. Half the semiconductor surface area is required with FMR technique compared to the diffused guard ring to achieve the same 600-V blocking voltage.
Keywords
Breakdown voltage; Dielectric devices; Electric breakdown; Leakage current; Magnetic resonance; Metallization; Semiconductor device breakdown; Semiconductor devices; Temperature dependence; Testing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26244
Filename
1485397
Link To Document