• DocumentCode
    1106523
  • Title

    First life-test results on planar p-i-n InGaAs/InP photodiodes passivated with SiO2or SiNx+SiO2or SiNxlayers

  • Author

    Ripoche, G. ; Decor, Ph. ; Blanjot, C. ; Bourdon, B. ; Salsac, P. ; Duda, E.

  • Author_Institution
    Centre de Recherches de la Compagnie Générale d´´Electricite, Marcoussis, France
  • Volume
    6
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    631
  • Lastpage
    633
  • Abstract
    This letter reports the results obtained with planar p-in photodiodes realized using three different passivating coatings and compares their performances and long-term stability in view of highly reliable component development.
  • Keywords
    Cleaning; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Life testing; PIN photodiodes; Passivation; Silicon compounds; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26256
  • Filename
    1485409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106523