DocumentCode :
1106611
Title :
A polysilicon emitter solar cell
Author :
Tarr, N. Garry
Author_Institution :
Carleton University, Ottawa, Ont., Canada
Volume :
6
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
655
Lastpage :
658
Abstract :
A new solar cell structure is reported in which the emitter consists of a thin layer of in situ phosphorus-doped polysilicon deposited by a low-pressure chemical vapor deposition (LPCVD) techniques. The highest process temperature required to fabricate this structure is only 627°C. Although the use of a polysilicon emitter results in some degradation in blue response, both theoretical and experimental results are presented indicating that photocurrent densities in excess of 30 mA.cm-2are attainable under AM1 illumination. The low back-injection current associated with the polysilicon emitter has allowed a very high open circuit voltage of 652 mV to be obtained at 28°C in a cell illuminated to give a short circuit current density of 30 mA.cm-2.
Keywords :
Annealing; Chemical vapor deposition; Degradation; Fingers; Lighting; Photoconductivity; Photovoltaic cells; Temperature; Testing; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26264
Filename :
1485417
Link To Document :
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