An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

Author

Wei Zhang ; Ying Hu ; Ting-Chang Chang ; Kuan-Chang Chang ; Tsung-Ming Tsai ; Hsin-Lu Chen ; Yu-Ting Su ; Tian-Jian Chu ; Min-Chen Chen ; Hui-Chun Huang ; Wan-Ching Su ; Jin-Cheng Zheng ; Ya-Chi Hung ; Sze, Simon M.

Author_Institution

Sch. of Adv. Mater. & Nanotechnol., Xidian Univ., Xi´an, China

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

772

Lastpage

774

Abstract

The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device´s potential for use as an electronic synapse device for neuromorphic systems.

Keywords

germanium compounds; platinum; resistive RAM; solid electrolytes; sulphur compounds; titanium compounds; AC pulse programming voltage amplitudes; Pt-GeSO-TiN; RRAM; electronic synapse device; neuromorphic systems; resistive random access memory; solid electrolyte; spike-timing-dependent plasticity learning; Electrodes; Immune system; Neuromorphics; Solids; Switches; Timing; Tin; RRAM; electronic synapse device; solid electrolyte; spike-timing-dependent plasticity learning (STDP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2448756

Filename

7131488