Title :
Fabrication of an Electrically Pumped Lead-Chalcogenide Midinfrared Laser on a [110] Oriented PbSnSe Substrate
Author :
Mukherjee, S. ; Li, D. ; Ray, D. ; Zhao, F. ; Elizondo, S.L. ; Jain, S. ; Ma, J. ; Shi, Z.
Author_Institution :
Univ. of Oklahoma, Norman
fDate :
4/15/2008 12:00:00 AM
Abstract :
The fabrication of an electrically pumped lead salt- based edge-emitting laser on a polished [110]-oriented PbSnSe substrate is presented. The laser structure was grown by molecular beam epitaxy and consisted of a PbSrSe-PbSe multiple quantum- well active region sandwiched between PbSrSe confinement layers. Pulsed laser emission was observed at lambda = 5.2 mum wavelength up to 158 K with a maximum of 40% duty cycle of current pumping. The repeatability in continuous lasing emission power was also examined.
Keywords :
lead compounds; molecular beam epitaxial growth; optical pumping; quantum well lasers; surface emitting lasers; PbSnSe; PbSrSe confinement layers; PbSrSe-PbSe; PbSrSe-PbSe multiple quantum-well; [110] oriented PbSnSe substrate; continuous lasing emission power; edge-emitting laser; electrically pumped lead-chalcogenide midinfrared laser; laser structure; molecular beam epitaxy; pulsed laser emission; wavelength 5.2 mum; Chemical lasers; Gas lasers; Laser excitation; Laser tuning; Lead; Molecular beam epitaxial growth; Optical device fabrication; Pump lasers; Semiconductor lasers; Substrates; Lead salts; [110] PbSnSe substrate; midinfrared (MIR) electrically pumped laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.918918
