Simulation of Ultrasubmicrometer-Gate $\hbox {In}_{0.52} \hbox {Al}_{0.48}\hbox {As/In}_{0.75}\hbox {Ga}_{0.25}\hbox {As/In}_{0.52}\hbox {Al}_{0.48}\hbox {As/InP}$ Pseudo

Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce f_Ts above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.