A high-performance high-voltage self-aligned double-diffused lateral (SADDL) p-n-p transistor

A new lateral transistor, the self-aligned double diffused lateral (SADDL) transistor was devdoped for high-voltage linear IC´s. It has a self-aligned narrow n-base to provide high hFEand high fT, and an electric field reducible p^-collector and electrodes to provide high BVceo. It was confirmed that fTof the SADDL transistor was improved without deterioration of BVceoby more than ten times that for other reported lateral transistors. A fabricated SADDL transistor of the 350 V class has a high hFE(∼100), high fT(∼15 MHz), and high Early voltage ( > 1000 V).