A 3-D Analytical Physically Based Model for the Subthreshold Swing in Undoped Trigate FinFETs

Author

El Hamid, Hamdy A. ; Guitart, Jaume R. ; Kilchytska, Valeria ; Flandre, Denis ; Iniguez, Benjamin

Author_Institution

Univ. Rovira i Virgili, Tarragona

Volume

54

Issue

9

fYear

2007

Firstpage

2487

Lastpage

2496

Abstract

An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed.

Keywords

MOSFET; semiconductor device models; stochastic processes; 3D Poisson equation; 3D analytical physically based model; conduction path; mobile-charge term; near-threshold regimes; subthreshold swing; undoped trigate FinFET; Analytical models; Electrostatic analysis; Fabrication; FinFETs; Helium; MOSFET circuits; Numerical simulation; Poisson equations; Scalability; Silicon; 3-D Poisson´s equation; Conduction path; semiconductor-device modeling; subthreshold swing; undoped FinFET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.902415

Filename

4294199