Resistive Memory Switching of $\\hbox {Cu}_{x}\\hbox {O}$ Films for a Nonvolatile Memory Application

Author

Lv, H.B. ; Yin, M. ; Fu, X.F. ; Song, Y.L. ; Tang, L. ; Zhou, P. ; Zhao, C.H. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y.

Author_Institution

Fudan Univ., Shanghai

Volume

29

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

309

Lastpage

311

Abstract

Poly crystalline Cu_xO films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/Cu_xO/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mum memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals.

Keywords

films; storage management chips; switching circuits; nonvolatile memory application; plasma oxidation; poly crystalline films; programmed logic signal; resistive memory switching; reversible bistable resistive switching; voltage sweeping; Electrodes; Logic testing; Nonvolatile memory; Optical films; Oxidation; Plasma applications; Plasma devices; Scanning electron microscopy; Substrates; X-ray scattering; $hbox{Cu}_{x}hbox{O}$; on/off ratio; plasma oxidation; resistive switching; retention test;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.917109

Filename

4475273

Resistive Memory Switching of Films for a Nonvolatile Memory Application

Lv, H.B. ; Yin, M. ; Fu, X.F. ; Song, Y.L. ; Tang, L. ; Zhou, P. ; Zhao, C.H. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y.

jour

Resistive Memory Switching of $\\hbox {Cu}_{x}\\hbox {O}$ Films for a Nonvolatile Memory Application