DocumentCode :
1107295
Title :
On oxide—nitride interface traps by thermal oxidation of thin nitride in metal-oxide-nitride-oxide-semiconductor memory structures
Author :
Suzuki, Eiichi ; Hayashi, Yutaka
Author_Institution :
Electrotechnical Laboratory, Niihari-gun, Ibaraki, Japan
Volume :
33
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
214
Lastpage :
217
Abstract :
Charging properties of metal-oxide(top-oxide)-nitride-oxide (tunnel-oxide)-semiconductor (MONOS) memory structures characterized by very low program voltage have been investigated and analyzed. By comparing the experimental observations with theoretical calculations, the capture cross section of the electron traps generated at the top oxide-nitride interface by thermal oxidation of the thin nitride primarily effecting the memory action of the MONOS devices is estimated to be about 6 × 10-14cm2.
Keywords :
Capacitance measurement; Capacitors; Chemicals; Electron traps; Low voltage; MONOS devices; Oxidation; Silicon; Thickness measurement; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22468
Filename :
1485685
Link To Document :
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