• DocumentCode
    1107312
  • Title

    Effective mass in picosecond laser-produced high-density plasma in silicon

  • Author

    Yang, Guo-zhen ; Bloembergen, N.

  • Author_Institution
    Harvard Univ., Cambridge, MA, USA
  • Volume
    22
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    195
  • Lastpage
    196
  • Abstract
    Picosecond laser-produced plasmas in silicon attain carrier densities of about 1021/cm3and temperatures of up to the melting point of about 1700 K. The optical data indicate only a slight increase of about 20 percent in the optical effective mass from the value at low density and room temperature. A simple model calculation is presented which confirms this behavior.
  • Keywords
    Semiconductor plasmas; Silicon materials/devices; Ultrafast optics; Charge carrier density; Effective mass; Electrons; Particle beam optics; Plasma density; Plasma immersion ion implantation; Plasma temperature; Silicon; Sprites (computer); Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1072853
  • Filename
    1072853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1107312