• DocumentCode
    110740
  • Title

    Structural and Electrical Characteristics of \\hbox {Yb}_{2}\\hbox {O}_{3} and \\hbox {YbTi}_{\\rm x}\\h</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Tung-Ming Pan ; Ching-Hung Chen ; Fa-Hsyang Chen ; Yu-Shu Huang ; Jim-Long Her</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>11</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2015</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Mar-15</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>248</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>254</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>In this paper, we developed high-κ Yb<sub>2</sub>O<sub>3</sub> and YbTi<sub>x</sub>O<sub>y</sub> gate dielectrics for an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) applications. Compared with the Yb<sub>2</sub>O<sub>3</sub> dielectric, the α-IGZO TFT using the high-κ YbTi<sub>x</sub>O<sub>y</sub> gate dielectric exhibited better electrical characteristics, such as a high Ion/Ioff ratio of 4.5×10<sup>7</sup>, a high field-effect mobility of 26.1 cm<sup>2</sup>/V-s, a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the Yb<sub>2</sub>O<sub>3</sub> film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high-κ Yb<sub>2</sub>O<sub>3</sub> and YbTi<sub>x</sub>O<sub>y</sub> a-IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>amorphous semiconductors; electron mobility; gallium compounds; high-k dielectric thin films; indium compounds; interface states; semiconductor device reliability; thin film transistors; ytterbium compounds; zinc compounds; InGaZnO-Yb<sub>2</sub>O<sub>3</sub>; InGaZnO-YbTi<sub>x</sub>O<sub>y</sub>; amorphous indium-gallium-zinc oxide thin-film transistor; amorphous-IGZO TFT; field-effect mobility; high-κ gate dielectrics; interface state density; negative bias stress conditions; oxide-channel interface; positive bias stress conditions; Dielectrics; Films; Logic gates; NIST; Rough surfaces; Surface roughness; Thin film transistors; <formula formulatype=$hbox{YbTi}_{rm x}hbox{O}_{rm y}$; $hbox{Yb}_{2}hbox{O}_{3}$ ; Amorphous indium-gallium-zinc oxide ($alpha$ -IGZO); gate dielectric; negative bias stress (NBS); positive bias stress (PBS); thin-film transistor (TFT);

  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2014.2380453
  • Filename
    6998846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=110740