• DocumentCode
    1107673
  • Title

    Computer-Aided Analysis of RFI Effects in Operational Amplifiers

  • Author

    Tront, Joseph G. ; Whalen, James J. ; Larson, Curtis E. ; Roe, James M.

  • Author_Institution
    Department of Electrical Engineering, Virginia Polytechnic Institute and State University. Blacksburg. VA 24061
  • Issue
    4
  • fYear
    1979
  • Firstpage
    297
  • Lastpage
    306
  • Abstract
    The modified Ebers-Moll model is used to predict RFI effects in the 741 operational amplifier (op amp)-a bipolar linear integrated circuit (IC). RFI susceptibility predictions for RF incident upon the op-amp input terminals are made using a complete model, a macromodel, and a voltage-offset model. Both the batch-mode computer program SPICE 2 and the commercial interactive computer program ISPICE are used. The three sets of calculated results are essentially identical and agree within 4 dB with experimental results measured at 220 MHz. A threshold cannot be given for the RF power level at which a 741 op amp is susceptible to RFI. The level depends upon the op-amp circuit application. For op-amp circuits designed to amplify input signals in the 0.1-to 1.0-V range, RF power levels as large as -15 to + 5 dBm may be required to cause RHI susceptibility problems. For op-amp circuits designed to amplify input signals in the 1-to 10-mV range, RF power levels as low as -55 to -35 dBm may cause RHI susceptibility problems.
  • Keywords
    Analog integrated circuits; Computer aided analysis; Integrated circuit modeling; Operational amplifiers; Predictive models; RF signals; Radio frequency; Radiofrequency amplifiers; Radiofrequency interference; Signal design;
  • fLanguage
    English
  • Journal_Title
    Electromagnetic Compatibility, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9375
  • Type

    jour

  • DOI
    10.1109/TEMC.1979.303770
  • Filename
    4091303