• DocumentCode
    1107916
  • Title

    Comments on "A theory of the Hooge parameters of solid-state devices"

  • Author

    Black, R.D.

  • Author_Institution
    General Electric Corporate Research and Development, Schenectady, NY
  • Volume
    33
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    532
  • Lastpage
    533
  • Abstract
    Handel\´s "quantum theory of 1/f noise" (Q.T.) was developed in the above paper in an ambitious attempt to explain the ubiquity of 1/f noise [1]-[3]. The theory has been used to derive the Hooge equation [4], which in turn has been used for many years now in analyses of experimental data (e.g., [5], [6]). The purpose of this comment is to point out serious flaws in Q.T. and to list recent empirical results which are not explained by the Hooge formula or any of its revisions.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22524
  • Filename
    1485741