DocumentCode :
1108192
Title :
A treatise on the capacitance—Voltage relation of high electron mobility transistors
Author :
Sadwick, Laurence P. ; Wang, K.L.
Author_Institution :
University of California, Los Angeles, CA
Volume :
33
Issue :
5
fYear :
1986
fDate :
5/1/1986 12:00:00 AM
Firstpage :
651
Lastpage :
656
Abstract :
A new model for the capacitance-voltage relation of a HEMT is presented. The model uses three physically motivated capacitive terms in series. The C(V) expressions are derived using the quantum mechanical triangular potential well model and the two-dimensional electron-gas charge-control model. These expressions provide further physical insight into the AlGaAs heterosystem. The results obtained should be readily applicable to such techniques as DLTS and other C(V) interface measurement methods. The equations derived will also serve as a basis for analytical and circuit modeling of HEMT structures.
Keywords :
Capacitance; Electrons; Gallium arsenide; HEMTs; Heterojunctions; Impurities; MODFETs; Particle scattering; Potential well; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22547
Filename :
1485764
Link To Document :
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