A steady-state temperature model for silicon recrystallization using light sources

A simplified, yet accurate enough temperature calculation scheme is proposed for SOI recrystallization using light sources. The assumption that the total amount of heat generated per unit area in the SOI wafer by the light absorption is balanced by the total outgoing radiation flux is shown to significantly reduce the CPU time to calculate the steady-state wafer temperature. The calculation results of this model have agreed fairly well with those of the rigorous and time-consuming Poisson solver (less than 3 K of temperature discrepancy for a typical case).