GaN-Based Power LEDs With CMOS ESD Protection Circuits

Author

Horng, J.J. ; Su, Y.K. ; Chang, S.J. ; Chen, W.S. ; Shei, S.C.

Author_Institution

Nat. Cheng Kung Univ., Tainan

Volume

7

Issue

2

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

340

Lastpage

346

Abstract

A power light-emitting diode (LED) module has been successfully designed and demonstrated by combining GaN-based power LEDs with CMOS electrostatic discharge (ESD) protection circuits through a flip-chip process. It was found that we could enhance the power LED output intensity by 20% by using the flip-chip technology. Lifetimes of flip-chip power LEDs were also found to be better. It was also found that the use of CMOS ESD protection circuits did not degrade the output intensity and lifetime of flip-chip power LEDs. Furthermore, it was found that we could not only significantly enhance the reverse ESD characteristics but could also enhance the positive ESD characteristics of nitride-based LEDs by using the CMOS ESD protection circuits.

Keywords

CMOS integrated circuits; III-V semiconductors; electrostatic discharge; flip-chip devices; gallium compounds; light emitting diodes; CMOS ESD protection circuits; CMOS electrostatic discharge; ESD; GaN - Interface; flip-chip process; output intensity; power LED; power light-emitting diode module; CMOS technology; Circuits; Electrostatic discharge; Fluorescent lamps; Heat transfer; Light emitting diodes; Protection; Schottky diodes; Substrates; Voltage; CMOS; GaN; electrostatic discharge (ESD); flip-chip technology; light emitting diode (LED);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2007.901059

Filename

4295089