DocumentCode
1108942
Title
Velocity-field profile of n-silicon: A theoretical analysis
Author
Ahmad, Nisar ; Arora, Vijay K.
Author_Institution
King Saud Univeristy, Riyadh, Saudi Arabia
Volume
33
Issue
7
fYear
1986
fDate
7/1/1986 12:00:00 AM
Firstpage
1075
Lastpage
1077
Abstract
A theoretical analysis of the drift velocity, mobility, and electron temperature as a function of the electric field for n-type silicon is made. This is based on the theory developed earlier by one of us. An excellent agreement with the experimentally observed behavior is obtained.
Keywords
Electron mobility; Equations; Nonlinear optics; Optical saturation; Optical scattering; Phonons; Physics; Silicon; Temperature; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22616
Filename
1485833
Link To Document