DocumentCode :
1109431
Title :
A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET´s
Author :
Chow, P.-M.D. ; Wang, Kang-Lung
Author_Institution :
University of California, Los Angeles, CA
Volume :
33
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1299
Lastpage :
1304
Abstract :
A new method is described for determining the channel charge and mobility of a MOS transistor as a function of gate bias from the ac admittance measurements. The admittance of the conduction channel of the MOSFET is derived from a transmission line model. The peaks of the G/\\omega versus ω curves are used to deduce gate-channel capacitance and mobility. The mobile carrier density and mobility in very thin-oxide MOSFET\´s can be measured more accurately using this ac method, since a zero lateral field and a uniform mobile charge distribution along the channel is maintained with zero drain-source voltage and interface trap effects are reduced by using high test frequencies. Measured data on the electron mobility versus gate voltage are presented for 90-A gate dielectric MOS transistors.
Keywords :
Admittance measurement; Capacitance; Charge carrier density; Charge measurement; Current measurement; Density measurement; Frequency measurement; MOSFET circuits; Transmission line measurements; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22662
Filename :
1485879
Link To Document :
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