DocumentCode
111015
Title
Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer
Author
Kang, Jiawen ; Kurdoghlian, A. ; Margomenos, A. ; Moyer, H.P. ; Brown, Dean ; McGuire, C.
Author_Institution
HRL Lab., LLC, Malibu, CA, USA
Volume
50
Issue
4
fYear
2014
fDate
February 13 2014
Firstpage
295
Lastpage
297
Abstract
An ultra-wideband double-balanced resistive mixer with high dynamic range (IIP3) is reported. The mixer is designed and fabricated using HRL Laboratory´s GaN high electron mobility transistor (HEMT) (T2) process and it utilises a series resistor-capacitor circuit network termination to the device gate, in order to achieve resonance-free broadband conversion loss and high dynamic range. The measured conversion loss from 3 to 40 GHz is between 5.5 and 8.5 dB at 1 GHz intermediate frequency. Large signal testing at 15 GHz showed a 1 dB gain compression point (P1dB) of 22 dBm.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; millimetre wave mixers; wide band gap semiconductors; GaN; HRL high electron mobility transistor T2 process; IIP3; device gate; frequency 1 GHz; frequency 3 GHz to 40 GHz; gain 1 dB; high dynamic range; low loss HEMT mixer; resonance free broadband conversion loss; series RC network termination; ultrawideband double-balanced resistive mixer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.4135
Filename
6746291
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