Title :
Photogeneration and recombination in a bulk barrier phototransistor
Author_Institution :
National Cheng Kung University, Tainan, Taiwan, Republic of China
fDate :
11/1/1986 12:00:00 AM
Abstract :
Photogeneration and recombination processes have been taken into consideration for the amorphous silicon bulk barrier phototransistors. Based on the developed model, optimum conditions to obtain maximum gain are reported and are experimentally verified. Trapping in the collector updoped region and at the minimum of the valance band barrier play an important role in the current gain and the response speed.
Keywords :
Amorphous silicon; Charge carrier processes; Electrodes; Electron emission; Gallium arsenide; Glass; Lighting; Niobium; Phototransistors; Radiative recombination;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22750
