Title :
InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode
Author :
Martin, R. ; Forouhar, S. ; Keo, S. ; Lang, Robert J. ; Hunsperger, R.G. ; Tiberio, R. ; Chapman, P.F.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE
fDate :
6/23/1994 12:00:00 AM
Abstract :
Results are presented on laterally-coupled distributed feedback (LC-DFB) ridge laser diodes. The epitaxial regrowth required in most distributed feedback devices is eliminated by using lateral evanescent coupling of the field to gratings etched along the sides of the ridge. A pulsed singlemode output power of 36 mW per facet was achieved at 937.5 nm with a sidemode suppression ratio (SMSR) of 30 dB for a 1.5 mm cavity length. A pulsed threshold of 11 mA, slope efficiency of 0.46 mW/mA per facet, and temperature sensitivity of 0.63 Å/°C were measured for a 250 μm cavity length LC-DFB
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; semiconductor lasers; 1.5 mm; 250 mum; 36 mW; 937.5 nm; InGaAs-GaAs-AlGaAs; LC-DFB ridge laser diode; cavity length; distributed feedback; etched; gratings; lateral evanescent coupling; laterally-coupled; pulsed singlemode output power; pulsed threshold; sidemode suppression ratio; slope efficiency; temperature sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940686
