DocumentCode
1111007
Title
Response time measurement of a mid-infrared photodetector
Author
de Barros, M.R.X. ; Becker, P.C. ; Miranda, R.S. ; West ; Dunkel, Jens ; Swaminathan, Viswanathan
Author_Institution
AT&T Bell Labs., Murray Hill, NJ
Volume
30
Issue
13
fYear
1994
fDate
6/23/1994 12:00:00 AM
Firstpage
1093
Lastpage
1094
Abstract
A direct measurement of the speed of a GaAs/Al0.2Ga0.8As quantum well infra-red photodetector is made using fast pulses centred at 9.7 μm. The electrical response of the detector has rise and decay times of less than 95 ps and the FWHM is 115 ps
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; infrared detectors; multiwave mixing; photodetectors; semiconductor device testing; semiconductor quantum wells; 115 ps; 9.7 mum; 95 ps; GaAs-Al0.2Ga0.8As; GaAs/Al0.2Ga0.8As quantum well; decay times; direct measurement; electrical response; mid-IR photodetector; nonlinear mixing of visible beams; response time measurement; rise times;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940708
Filename
294821
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