• DocumentCode
    1111007
  • Title

    Response time measurement of a mid-infrared photodetector

  • Author

    de Barros, M.R.X. ; Becker, P.C. ; Miranda, R.S. ; West ; Dunkel, Jens ; Swaminathan, Viswanathan

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ
  • Volume
    30
  • Issue
    13
  • fYear
    1994
  • fDate
    6/23/1994 12:00:00 AM
  • Firstpage
    1093
  • Lastpage
    1094
  • Abstract
    A direct measurement of the speed of a GaAs/Al0.2Ga0.8As quantum well infra-red photodetector is made using fast pulses centred at 9.7 μm. The electrical response of the detector has rise and decay times of less than 95 ps and the FWHM is 115 ps
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; infrared detectors; multiwave mixing; photodetectors; semiconductor device testing; semiconductor quantum wells; 115 ps; 9.7 mum; 95 ps; GaAs-Al0.2Ga0.8As; GaAs/Al0.2Ga0.8As quantum well; decay times; direct measurement; electrical response; mid-IR photodetector; nonlinear mixing of visible beams; response time measurement; rise times;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940708
  • Filename
    294821