• DocumentCode
    1111015
  • Title

    In0.49Ga0.15P/In0.15Ga0.85 As heterostructure pulsed doped-channel FETs

  • Author

    Chan, Y.J. ; Yeh, T.-J. ; Kuo, J.-M.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li
  • Volume
    30
  • Issue
    13
  • fYear
    1994
  • fDate
    6/23/1994 12:00:00 AM
  • Firstpage
    1094
  • Lastpage
    1095
  • Abstract
    In0.49Ga0.15P/In0.15Ga0.85 As heterostructure pulsed doped-channel FETs were fabricated and evaluated by DC and microwave measurements. This pulsed doped-channel approach provides a higher carrier density and a higher breakdown voltage, as compared to the conventional modulation-doped approach. A g m of 207 mS/mm, an fT of 16.7 GHz, and an fmax of 31.6 GHz, were obtained with a 1 μm-long gate at 300 K
  • Keywords
    Hall effect; III-V semiconductors; carrier density; characteristics measurement; electric breakdown of solids; electrical conductivity measurement; field effect transistors; gallium arsenide; indium compounds; microwave measurement; semiconductor device testing; semiconductor quantum wells; 1 mum; 16.7 GHz; 300 K; 31.6 GHz; DC measurements; Hall mobilities; I-V characteristics; In0.49Ga0.15P-In0.15Ga0.85As; In0.49Ga0.15P/In0.15Ga0.85As heterostructure; breakdown voltage; microwave measurements; pulsed doped-channel FETs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940721
  • Filename
    294822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111015