DocumentCode
1111085
Title
Subnanosecond 300 V diffused step recovery diode
Author
Chudobiak, M.J. ; Walkey, D.J.
Author_Institution
Avtech Electrosyst. Ltd., Ottawa, Ont., Canada
Volume
32
Issue
16
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1513
Lastpage
1515
Abstract
A novel diffused step recovery diode structure is presented, which can operate with reverse voltages of several hundred volts and which exhibits long lifetimes of several microseconds. Experimental results for fabricated devices are presented for 300 V operation into a 50 Ω load, with 1.7 ns (typical) and 0.9 ns (best-case) transition times
Keywords
charge storage diodes; doping profiles; electric breakdown; semiconductor switches; 0.9 to 1.7 ns; 300 V; SRD; breakdown voltage; charge storage diodes; diffused Gaussian doping structure; diffused step recovery diode; subnanosecond operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960987
Filename
511931
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