• DocumentCode
    1111105
  • Title

    Thermal effects in HBT emitter resistance extraction

  • Author

    Hanington, G. ; Chang, C.E. ; Zampardi, P.J. ; Asbeck, P.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
  • Volume
    32
  • Issue
    16
  • fYear
    1996
  • fDate
    8/1/1996 12:00:00 AM
  • Firstpage
    1515
  • Lastpage
    1516
  • Abstract
    It is shown that device self-heating effects introduce a significant error in the determination of emitter resistance in AlGaAs-GaAs HBTs by the common technique of extrapolating 1/gm against 1/lc (where gm is the observed device transconductance). An approximate expression for the error is given, and an improved technique for Re extraction is presented
  • Keywords
    III-V semiconductors; aluminium compounds; electric resistance; errors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; AlGaAs-GaAs HBTs; HBT emitter resistance extraction; device self-heating effects; device transconductance; error; thermal effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961017
  • Filename
    511932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111105