DocumentCode
1111180
Title
VIA-2 high-gain InP/InGaAs n-p-n heterojunction bipolar transistors grown by gas-source MBE
Author
Nottenburg, R.N. ; Temkin, H. ; Panish, M.B.
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1862
Lastpage
1862
Keywords
Current density; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Iron; Molecular beam epitaxial growth; Photoconducting materials; Switches; Zinc;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22822
Filename
1486039
Link To Document