DocumentCode :
1111269
Title :
VIB-4 hot-electron transport in the base of heterojunction bipolar transistors
Author :
Hayes, J.R. ; Levi, A.F.J. ; English, J.H. ; Gossard, Arthur C.
Author_Institution :
Bell Communications Research, Murray Hill, NJ
Volume :
33
Issue :
11
fYear :
1986
Firstpage :
1865
Lastpage :
1865
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22830
Filename :
1486047
Link To Document :
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