DocumentCode
1111338
Title
Electrooptical effects in silicon
Author
Soref, Richard A. ; Bennett, Brian R.
Author_Institution
USAF Rome Lab., Hanscom Air Force Base, MA, USA
Volume
23
Issue
1
fYear
1987
fDate
1/1/1987 12:00:00 AM
Firstpage
123
Lastpage
129
Abstract
A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 
m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find 
at 
m when 
V/cm, while the Kerr effect gives 
at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of 
at 
m.
m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find at m when V/cm, while the Kerr effect gives at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of at m.Keywords
Electrooptic materials/devices; Optical refraction; Silicon materials/devices; Absorption; Charge carriers; Crystallization; Nonlinear optics; Optical refraction; Optical variables control; Optical waveguides; Phase modulation; Refractive index; Silicon;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073206
Filename
1073206
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