DocumentCode :
1111338
Title :
Electrooptical effects in silicon
Author :
Soref, Richard A. ; Bennett, Brian R.
Author_Institution :
USAF Rome Lab., Hanscom Air Force Base, MA, USA
Volume :
23
Issue :
1
fYear :
1987
fDate :
1/1/1987 12:00:00 AM
Firstpage :
123
Lastpage :
129
Abstract :
A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 
m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find 
at 
m when 
V/cm, while the Kerr effect gives 
at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of 
at 
m.
m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find at m when V/cm, while the Kerr effect gives at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of at m.Keywords :
Electrooptic materials/devices; Optical refraction; Silicon materials/devices; Absorption; Charge carriers; Crystallization; Nonlinear optics; Optical refraction; Optical variables control; Optical waveguides; Phase modulation; Refractive index; Silicon;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073206
Filename :
1073206
Link To Document :
