Title :
Surface-mounted GaAs active splitter and attenuator MMIC´s used in a 1—10-GHz leveling loop
Author :
Barta, Gary S. ; Jones, Keith E. ; Herrick, Geoffrey C. ; Strid, Eric W.
Author_Institution :
TriQuint Semiconductor, Inc., Tektronix Industrial Park, Beaverton, OR
fDate :
12/1/1986 12:00:00 AM
Abstract :
A wide-band monolithic GaAs bridge-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact 1-10-GHz leveling loop having a minimum 9-dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1-10-GHz bandwidth by the use of on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1-10-GHz bandwidth by the use of distributed amplification. The entire 4.5-cm by 4.2-cm subsystem was realized with surface mount packages on RT-Duroid®, demonstrating new construction techniques for GaAs MMIC assembly.
Keywords :
Application specific integrated circuits; Attenuation; Attenuators; Bandwidth; FETs; Gallium arsenide; MMICs; Microwave integrated circuits; Microwave theory and techniques; Packaging;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22875