MeV implants boost device design

This high energy technique minimizes soft error rate, latchup, leakage, noise, and ESD in MOSFETs. High energy implant tools reduce process cost and complexity because they eliminate the need for a significant number of process steps and mask levels. Using MeV implant tools for retrograde wells, mask levels and process steps are eliminated. They also reduce metal contamination, thermal stress and wafer warpage. In fact, MeV implanters can substantially reduce the thermal budget from both processing time and temperature. With MeV implanters, there are opportunities to eliminate silicon epitaxy and p+ substrates, 5-to-20 percent cost reduction has been quoted with the migration to low cost wafers and MeV technology