• DocumentCode
    1112053
  • Title

    DC drift of X-cut LiNbO3 modulators

  • Author

    Nagata, Hirotoshi ; Li, Yagang ; Bosenberg, Walter R. ; Reiff, G.L.

  • Author_Institution
    JDS Uniphase Corp., Bloomfield, CT, USA
  • Volume
    16
  • Issue
    10
  • fYear
    2004
  • Firstpage
    2233
  • Lastpage
    2235
  • Abstract
    DC drift of unbuffered dc bias electrode port of x-cut LiNbO3 (LN) modulators is investigated. Unlike buffered LN modulators, their dc drift is irreversible and relatively suppressed after biased aging. Additionally, they show rolling-over-type drift and do not drift divergently. Extended temperature-voltage accelerated drift tests find temperature activation energy of 1.2 eV and a proportional relationship between drift rates and initially applied bias voltages. Such drift behaviors characteristic of unbuffered x-LN can demonstrate their high reliability with respect to dc bias drift.
  • Keywords
    electro-optical modulation; lithium compounds; reliability; DC bias electrode; DC drift; LiNbO3; X-cut LiNbO3 modulators; biased aging; reliability; rolling-over-type drift; Aging; Buffer layers; Electrodes; Intensity modulation; Life estimation; Life testing; Optical modulation; Performance evaluation; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2004.834486
  • Filename
    1336887