Title :
New method to measure the source and drain resistance of the GaAs MESFET
Author :
Yang, Long ; Long, Stephen I.
Author_Institution :
University of California, Santa Barbera, CA
fDate :
2/1/1986 12:00:00 AM
Abstract :
The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of Rsand Rdover a relatively wide range of drain currents.
Keywords :
Current density; Current measurement; Diodes; Doping profiles; Electrical resistance measurement; Equations; Error correction; Gallium arsenide; MESFETs; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26299
