New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

We present experimental evidence for negative differential resistance in n-channel heterostructure insulated gate transistors (HIGFET´s) at high gate voltages. The negative resistance is explained by an increase in the gate current related to the electron heating in the two-dimensional electron gas. This mechanism is similar to that causing the negative differential resistance in NERFET´s. However, much smaller parasitic capacitance in HIGFET´s may allow us to reach higher frequencies of operation.